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Influence of growth flux and surface supersaturation on InGaAs/GaAs strain relaxation

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Influence of growth flux and surface supersaturation on InGaAs/GaAs strain relaxation

Auteurs : RBID : Pascal:04-0075923

Descripteurs français

Pascal (Inist)
- 8115H, 6855A, 6860B, 8140L, 6172H, 6240, 6220F, 8260N, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Croissance semiconducteur, Couche épitaxique semiconductrice, Epitaxie jet moléculaire, Relaxation contrainte, Glissement, Bande déformation en genou, Nucléation.

English descriptors

KwdEn :
- Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Kink bands, Molecular beam epitaxy, Nucleation, Semiconductor epitaxial layers, Semiconductor growth, Slip, Stress relaxation.

Abstract

We present results showing that the strain relaxation rate in heteroepitaxial layers depends strongly on the presence of the growth flux. These results are based on real-time stress measurements made during molecular beam epitaxy of In_xGa_1-xAs/GaAs(x=0.16±0.01) films grown at 452, 477, and 502°C. Our measurements indicate that the increased relaxation rate during growth is due to an enhancement in the dislocation glide velocity. We propose a model for the dislocation velocity increase in which the growth-induced supersaturation of adatoms lowers the barrier to single kink nucleation. © 2004 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Hong, S K" uniqKey="Hong S">S. K. Hong</name>
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Influence of growth flux and surface supersaturation on InGaAs/GaAs strain relaxation

Influence of growth flux and surface supersaturation on InGaAs/GaAs strain relaxation

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Abstract

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